Enhanced Thermal Stability of Sputtered TiN Thin Films for Their Applications as Diffusion Barriers against Copper Interconnect

In this work, the deposition of titanium nitride (TiN) thin film using direct current (DC) sputtering technique and its application as diffusion barriers against copper interconnect was presented. The deposited analyzed by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), photoelectron spectroscopy (XPS) techniques. XRD patterns showed face-centered cubic (FCC) structure for TiN/SiO2/Si film, having (111) (200) peaks TiN (111), Cu(111), Cu(200) Cu/TiN/SiO2/Si film. FESEM images revealed that grains were homogeneously dispersed on surface a finite size. XPS study Ti2p doublet with centered at 455.1 eV 461.0 observed. Furthermore, stoichiometry found to be 0.98. sheet resistance four-point probe method, resistivity calculated 11 μΩ cm. For utilization, tested barrier performance Cu interconnect. results exhibited has excellent in metallization up temperature 700 °C. However, higher annealing 800 °C, formation Cu3Si TiSi2 compounds evident. Thus, stoichiometric high thermal stability low produced could applied fabrication microelectronic devices.